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Simulation of high-temperature millisecond annealing based on atomistic modeling of boron diffusion/activation in siliconHANE, Masami; IKEZAWA, Takeo; MATSUDA, Tomoko et al.International Electron Devices Meeting. 2004, pp 975-978, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

High temperature getter for compact HID lampsDE MAAGT, B. J; CORAZZA, A.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 17, pp 3066-3070, issn 0022-3727, 5 p.Conference Paper

A novel high temperature NMR probe design : application to ¹⁷O studies of gel formation of zirconiaPOPLETT, I. J. F; SMITHT, M. E; STRANGE, J. H et al.Measurement science & technology (Print). 2000, Vol 11, Num 12, pp 1703-1707, issn 0957-0233Article

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °CNEUDECK, Philip G; SPRY, David J; PROKOP, Norman F et al.IEEE electron device letters. 2008, Vol 29, Num 5, pp 456-459, issn 0741-3106, 4 p.Article

Monitoring high-temperature solid-solid phase transitions of HMX with atomic force microscopyWEEKS, Brandon L; RUDDLE, Chantel M; ZAUG, Joseph M et al.Ultramicroscopy. 2002, Vol 93, Num 1, pp 19-23, issn 0304-3991, 5 p.Article

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Stable passivation technique for high-temperature polycrystalline silicon on insulator MOSFETs for MEMS integrationBHAT, K. N; DANIEL, R. J; BHATTACHARYA, E et al.Electronics Letters. 2006, Vol 42, Num 12, pp 721-722, issn 0013-5194, 2 p.Article

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The characterization of Y₂O₂S:Sm powder as a thermographic phosphor for high temperature applicationsFEIST, J. P; HEYES, A. L.Measurement science & technology (Print). 2000, Vol 11, Num 7, pp 942-947, issn 0957-0233Article

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Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier DegradationPOBEGEN, Gregor; TYAGINOV, Stanislav; NELHIEBEL, Michael et al.IEEE electron device letters. 2013, Vol 34, Num 8, pp 939-941, issn 0741-3106, 3 p.Article

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Nanosecond Pulse Generation in a Silicon MicrowireCYWAR, Adam; BAKAN, Gokhan; SILVA, Helena et al.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1362-1364, issn 0741-3106, 3 p.Article

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